NDLI: GaInP/GaAs HBTs: state of the art and future trends

Content Provider	IEEE Xplore Digital Library
Author	Wadsworth, S.D. Davies, R.A. Davies, I. Marsh, S.P. Peniket, N.A. Phillips, W.A. Wallis, R.H.
Copyright Year	1998
Description	Author affiliation: GEC-Marconi Mater. Technol. Ltd., Towcester, UK (Wadsworth, S.D.)
Abstract	The features of GaInP/GaAs HBT technology are illustrated by a description of the advanced general purpose GMMT B20 process, which has f/sub T/ and f/sub max/ typically 50 GHz and a breakdown voltage BV/sub CEO/ in excess of 10 volts. This process has been used for the design of analogue and digital circuits in order to demonstrate a capability for the fabrication of a range of high linearity and broadband circuits for communication systems. A survey of the current state of the art of HBTs is presented, focusing on the process variations needed to address specific applications, and including a comparison with HBT technologies developed on other material combinations. The key parameters determining high-frequency performance are identified in order to assess future trends and performance limitations, including reliability and thermal issues.
Starting Page	40
Ending Page	44
File Size	556942
Page Count	5
File Format	PDF
ISBN	0780349008
DOI	10.1109/ISSSE.1998.738033
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-10-02
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Digital circuits Microwave devices Bipolar transistors Semiconductor materials Frequency Manufacturing processes Power amplifiers Isolation technology
Content Type	Text
Resource Type	Article

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