NDLI: An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Metzger, A.G. Ramanathan, R. Jiang Li Hsiang-Chih Sun Cismaru, C. Hongxiao Shao Rushing, L. Weller, K.P. Ce-Jun Wei Yu Zhu Klimashov, A. Tkachenko, Y.A. Bin Li Zampardi, P.J.
Copyright Year	1966
Abstract	The last decade has seen GaAs HBTs emerge as the dominant technology in wireless handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of depletion mode n-FET and GaAs HBT. The merger of Bipolar and FET, or BiFET, gives an additional degree of freedom in the design of advanced power amplifiers independent of a silicon controller. This paper provides an overview of the various techniques that can be used to join the two device technologies and then shows how a merged epitaxial structure, where an FET is formed in the emitter layers of an HBT, combines functional versatility with the high volume manufacturability needed to supply millions of power amplifiers at low cost. A large-signal model of the FET structure is developed which takes into account the unique physics and geometries of the device, including voltage-dependant parameters and charges on all four electrical terminals. Specific handset applications that can benefit or be enabled by BiFET are presented, such as on-off switching, low voltage bias controllers , Auto-Bias power amplifiers, and bias circuits with low or no voltage reference. When npn-only bias circuitry is limited to low voltage reference levels, HBT power amplifiers with BiFET bias stages are shown to have superior RF performance to their npn-only counterparts.
Sponsorship	IEEE Solid-State Circuits Society IEEE Electron Devices Society IEEE Circuits and Systems Society Japan Society of Applied Physics (JSAP) IEEE Microwave Theory and Techniques Society IEEE San Francisco Section Bay Area Council Univ. PA IEEE
Starting Page	2137
Ending Page	2148
Page Count	12
File Size	1880591
File Format	PDF
ISSN	00189200
Volume Number	42
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Telephone sets Power amplifiers Heterojunction bipolar transistors FETs Low voltage Radiofrequency amplifiers Circuits Corporate acquisitions Silicon semiconductor technology Bipolar transistor circuits field effect devices field effect transistor circuits heterojunction bipolar transistors (HBTs) microwave power amplifiers modeling MODFET semiconductor epitaxial layers
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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