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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wangkun Jia Helenbrook, B.T. Cheng, M.-C. |
| Copyright Year | 2014 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA (Wangkun Jia; Cheng, M.-C.) || Dept. of Mech. & Aeronaut. Eng., Clarkson Univ., Potsdam, NY, USA (Helenbrook, B.T.) |
| Abstract | A dynamic reduced-order thermal model based on proper orthogonal decomposition (POD) is presented and applied to semiconductor structures, including a multi-fin multi-gate field effective transistor (MuGFET) structure with metal contacts and metal/poly wires. It is shown that the dynamic POD models generated under the conditions of synchronized power pulses are able to respond to unsynchronized pulses with shifts in time. It has been demonstrated that the accurate POD model offers thermal solution as detailed as direct numerical simulation (DNS) and is able to reduce numerical degrees of freedom by 5 to 6 orders of magnitude. |
| Starting Page | 230 |
| Ending Page | 235 |
| File Size | 613449 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781479943746 |
| DOI | 10.1109/SEMI-THERM.2014.6892245 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-03-09 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Wires Metals Semiconductor device modeling Numerical models Integrated circuit modeling Eigenvalues and eigenfunctions Temperature distribution MuGFET Proper orthogonal decomposition (POD) reduce order model thermal simulation |
| Content Type | Text |
| Resource Type | Article |
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