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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bernstein, J.B. Joohan Lee |
| Copyright Year | 2001 |
| Description | Author affiliation: Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA (Bernstein, J.B.) |
| Abstract | Some applications are presented for implementing a novel laser-programmable interconnect element (MakeLink/sup TM/) formed vertically between two standard metallization layers. The average electrical resistance for the smallest link is less than 10/spl Omega/ at optimal laser energy. Life tests under accelerating DC current densities and temperatures indicated high electromigration reliability. This technology is shown to be scaleable down to 1.5 /spl mu/m pitch based on commercially available laser systems. Finite element models of various structures were simulated and the results show that there exists an acceptable process window for any scaled link. Properties such as standard CMOS process compatibility, no programming circuit, high current handling capability, hermeticity and radiation hardness, make it useful in customizable devices and to replace laser fuses for yield enhancement and other rapid customization applications. |
| Sponsorship | IEEE Electron Devices Soc. |
| Starting Page | 347 |
| Ending Page | 350 |
| File Size | 442579 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780367316 |
| DOI | 10.1109/ISSM.2001.962985 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Laser modes Integrated circuit interconnections Metallization Electric resistance Life testing Life estimation Current density Temperature Electromigration CMOS technology |
| Content Type | Text |
| Resource Type | Article |
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