NDLI: Analysis of nonlinear memory effects on the linearity of a SiC MESFET

Content Provider	IEEE Xplore Digital Library
Author	Augaudy, S. Quere, R. Teyssier, J.P.
Copyright Year	2002
Description	Author affiliation: IRCOM, CNRS, University of Limoges, IUT GEII 7 Rue J. Vallès 19100 Brive France. Phone (33) 5.55.86.73.18, Fax (033) 5.55.86.14.26, e-mail: augaudy@brive.unilim.fr (Augaudy, S.) \|\| IRCOM, CNRS, University of Limoges, IUT GEII 7 Rue J. Vallès 19100 Brive France. Phone (33) 5.55.86.73.18, Fax (033) 5.55.86.14.26 (Quere, R.; Teyssier, J.P.)
Abstract	With experimental characterizations based on a pulsed I-V and pulsed S-parameters measurement set-up, we investigate the trapping and thermal behavior of SiC MESFETs. It is shown that electrical performances are strongly affected by substrate traps and by temperature. We demonstrate the capability of a transistor model that takes into account these effects to simulate power amplifiers. In the case of complex modulations used in third generation wireless telephony, we compute the consequences of memory effects on the ALCR linearity criterion.
Starting Page	1
Ending Page	3
File Size	2446882
Page Count	3
File Format	PDF
DOI	10.1109/EUMA.2002.339279
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-09-23
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Linearity Silicon carbide MESFETs Pulse amplifiers Pulse measurements Scattering parameters Temperature Computational modeling Power amplifiers Telephony
Content Type	Text
Resource Type	Article

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