NDLI: Dense array of quantum dot in Ge/Si nanostructures: Strain induced control of electron energy spectrum and optical transitions

Content Provider	IEEE Xplore Digital Library
Author	Dvurechenskii, A. Yakimov, A.
Copyright Year	2009
Description	Author affiliation: Siberian Branch of Russian Academy of Sciences, Rhzanov Institute of Semiconductor Physics, Novosibirsk, Russia (Dvurechenskii, A.; Yakimov, A.)
Abstract	The space-charge spectroscopy, EPR, modeling of inhomogeneous strain field with Keating interatomic potential, hole energy calculation with nearest neighbor tight-binding single-particle Hamiltonian with the sp3 basis and the electronic energy levels calculation with solving three-dimensional effective-mass Schrödinger equation were used to study dense array of Ge quantum dots in Si. The enlargement of electron binding energy takes place in multilayer Ge/Si structures with vertical stacking of Ge islands due to accumulation of strain energy from different dot layers in a stack and increase of the potential well depth. In strained dots the change interdot distances causes crossing between the hole energy levels corresponding to bonding and antibonding orbitals. The enhancement of oscillator strength of the optical interband transition in type-II QDs occurs, depending on the interdot separation with peak at 3 nm.
Starting Page	210
Ending Page	213
File Size	301816
Page Count	4
File Format	PDF
ISBN	9781424448326
ISSN	19449380
e-ISBN	9789810836948
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-26
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Carmelina Ruggiero
Subject Keyword	Optical arrays Strain control Quantum dots Nanostructures Optical control Electron optics Capacitive sensors Energy states Spectroscopy Paramagnetic resonance energy spectrum quantum dots silicon germanium strain
Content Type	Text
Resource Type	Article

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