NDLI: The Characterisation and Large-Signal Modelling of InGaAs Pseudomorphic High Electron Mobility Transistors

Content Provider	IEEE Xplore Digital Library
Author	Cojocaru, Vicentiu I. Perry, Philip Brazil, Thomas J.
Copyright Year	1994
Description	Author affiliation: Department of Electonic and Electrical Engineenng, University College Dublin, Dublin 4, Ireland. Tel: +353-1-706 1908; Fax: +353-1-2830921; E-mail: vivi@hertzucd.ie (Cojocaru, Vicentiu I.) \|\| Department of Electonic and Electrical Engineenng, University College Dublin, Dublin 4, Ireland (Perry, Philip; Brazil, Thomas J.)
Abstract	A high-performance pseudomorphic InGaAs/AIGaAs HEMT has been characterised from DC to microwave frequencies, using a powerful measurement-based parameter extraction methodology. This methodology has alreadt beea proved to work for conventional FET "on-wafer" structures [7] and uses DC and broad-band multi-bias point (CW) S-parameter measurements to determine all the elements of the equivalent circuit. This technique hast bees now developed to include a simple but efficient optimisation strategy, for extracting package-related parasitics. Accurate non-linear models for the gate capacitances and the drain-circuit elements are proposed, leading to an effective large-signal universal model for P-HEMT devices. The model is validated by comparing DC, small and large-signal experimental results with simulations performed with the HP-MDS simulator.
Starting Page	1598
Ending Page	1603
File Size	6719735
Page Count	6
File Format	PDF
DOI	10.1109/EUMA.1994.337446
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-09-05
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide PHEMTs Electron mobility HEMTs MODFETs Microwave FETs Microwave transistors Microwave frequencies Microwave measurements Frequency measurement
Content Type	Text
Resource Type	Article

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