NDLI: State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications

Content Provider	IEEE Xplore Digital Library
Author	Diehl, Roland Schlechtweg, Michael
Copyright Year	1995
Description	Author affiliation: Fraunhofer-Institut fuer Angewandte, Festkoerperphysik, Freiburg/Germany (Diehl, Roland; Schlechtweg, Michael)
Abstract	Based on arsenides, phosphides and more recently also on nitrides and antimonides the portfolio of III-V semiconductor devices is large. Solid solution and heterostructuring enable high versatility in electronic and optoelectronic characteristics. Lattice matched, pseudomorphic, metamorphic HEMTs, HBTs with tunneling emitters, resonant tunneling diodes (RTDs) with large peak-to-valley ratios, high-modulation, tunable and surface emitting laser diodes, high-power diode lasers, MSM and PIN photodiodes, quantum well infrared photodiodes (QWIPs), blue emitters, high-brightness LEDs, SEED and VSTEP devices are basic constituents of microwave/mm-wave, optoelectronic and high speed/low power consuption components which enable novel system realizations not possible before. Applicability of III-V devices depends on the ease of interplaying with a silicon world, their integratability to ICs of higher functionality as well as on reliability and cost-effective manufacturing.
Starting Page	1281
Ending Page	1289
File Size	12326285
Page Count	9
File Format	PDF
DOI	10.1109/EUMA.1995.337171
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-04
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	III-V semiconductor materials Semiconductor devices Microwave devices Diode lasers Portfolios Solids Lattices mHEMTs Resonant tunneling devices Semiconductor diodes
Content Type	Text
Resource Type	Article

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