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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Goncharuk, N.M. Karushkin, N.F. |
| Copyright Year | 2009 |
| Description | Author affiliation: RI «Orion», 8a Egen Potie, Kiev, 03680, Ukraine (Goncharuk, N.M.; Karushkin, N.F.) |
| Abstract | A numerical model of semiconducting resonant tunnelling diode (RTD) on a base of AlGaN/GaN/AlGaN double-barrier quantum structure (DBQS) with a GaN transit layer is created. The functional connections of diode impedance and admittance versus the frequency of a variable signal, parameters of the DBQS and the transit layer are received and investigated. For the diode with an identical width of 1 nm of DBQS layers and an optimum height of input and output AlGaN potential barriers is 0,35 and 0,44 eV. The max negative conductance is close to −7, 5 and − 3 mS at frequencies 0,35 and 0,5 THz when the width of transit layer is equal to 63 and 132 nm accordingly. The higher frequency of a band of negative conductance of diode reaches 0,9 THz under typical parameters of series parasitic resistance of contact members. |
| Starting Page | 671 |
| Ending Page | 672 |
| File Size | 1170647 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424447961 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-09-14 |
| Publisher Place | Ukraine |
| Access Restriction | Subscribed |
| Rights Holder | CrSTC |
| Subject Keyword | III-V semiconductor materials Gallium nitride Resonant tunneling devices Semiconductor diodes Aluminum gallium nitride Frequency Numerical models Semiconductivity Impedance Admittance |
| Content Type | Text |
| Resource Type | Article |
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