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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kobayashi, K.W. Kasody, R. Oki, A.K. Dow, S. Allen, B. Streit, D.C. |
| Copyright Year | 1994 |
| Description | Author affiliation: Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA (Kobayashi, K.W.; Kasody, R.; Oki, A.K.; Dow, S.; Allen, B.; Streit, D.C.) |
| Abstract | We report on a K-band double-balanced mixer using Schottky diodes made with our baseline (foundry) GaAs HBT technology. The GaAs HBT MBE structure which yields a transistor f/sub max/ of 50 GHz, can also support Schottky diode structures with THz cut-off frequencies. A GaAs HBT Schottky diode double-balanced mixer achieves an upconversion loss of less than 6 dB over an RF output frequency band from 18-22 GHz, an LO frequency of 12 GHz @ +10 dBm, and an IF input frequency band from 6-10 GHz. An output IP3 of 9 dBm with an LO drive of 10 dBm was achieved. IF-RF and IF-LO isolations of >20 dB. And an LO-RF isolation of >30 dB were achieved over the broad band. In comparison to a HEMT Schottky diode implementation or the same identical design, the HBT Schottky implementation achieves lower conversion loss and higher IP3 for a given LO drive level and obtains similar isolation and intermodulation. |
| Starting Page | 1163 |
| Ending Page | 1166 |
| File Size | 361118 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780317785 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.1994.335551 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-05-23 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | K-band Gallium arsenide Heterojunction bipolar transistors Schottky diodes Foundries Cutoff frequency Radio frequency HEMTs |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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