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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Alsunaidi, M.A. El-Ghazaly, S.M. |
| Copyright Year | 1994 |
| Description | Author affiliation: Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA (Alsunaidi, M.A.; El-Ghazaly, S.M.) |
| Abstract | A high frequency full wave model for microwave and millimeter wave GaAs Field Transistors (FET) is presented. The consists of two coupled models for the solid-state and electromagnetic parts of the problem. In the solid-state part, a hydrodynamic model consisting of the conservation equations for carrier density, energy, and momentum is utilized. All the conservation equations are solved with minimum simplifications. On the electromagnetic side, a 3D model consisting of Maxwell's equations is used. The time domain simulation of the device is performed using finite difference method. Numerical results of the presented model for a 0.5 /spl mu/m MESFET show that wave effect plays a crucial role in modulating fields and electron velocities inside the active device. The wave propagation is detected and found to cause considerable variations in field distribution and electron velocities. |
| Starting Page | 397 |
| Ending Page | 400 |
| File Size | 287865 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780317785 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.1994.335416 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1994-05-23 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Time domain analysis Gallium arsenide Hydrodynamics Maxwell equations Microwave FETs Electromagnetic coupling Solid modeling Electromagnetic modeling Solid state circuits Electrons |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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