NDLI: Q-, V-, and W-band power amplifiers utilizing coupled lines for impedance matching

Content Provider	IEEE Xplore Digital Library
Author	Abbasi, Morteza Zirath, Herbert Angelov, Iltcho
Copyright Year	2008
Description	Author affiliation: Chalmers University of Technology, Microwave Electronics Laboratory, MC2, Göteborg, Sweden (Abbasi, Morteza; Zirath, Herbert; Angelov, Iltcho)
Abstract	This paper introduces the use of the coupled transmission lines structure for impedance matching networks which is suitable for power amplifier design at millimeter-wave frequency bands. The structure can replace the conventional stub matching networks and MIM (Metal-Insulator-Metal) capacitors for DC blocking. Five MMIC power amplifiers have been designed based on coupled lines impedance transformers at 35 GHz, 60 GHz and 100 GHz. The fabricated two-stage 35 GHz PA has a small-signal gain of 20 dB and input and output reflection coefficients of less than −10 dB and can deliver 16 dBm output power. The two-stage 60 GHz power amplifier shows 15dB of small-signal gain and less than −10 dB of reflection coefficients with the output power of 16 dBm. The 100 GHz amplifier has small-signal gain of 10 dB and 7 dBm output power.
Starting Page	863
Ending Page	866
File Size	5320582
Page Count	4
File Format	PDF
ISBN	9781424417803
ISSN	0149645X
DOI	10.1109/MWSYM.2008.4632969
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power amplifiers Impedance Power generation Logic gates Gain Transistors Resistors coupled transmission lines impedance matching 100 GHz 60 GHz 35 GHz MMIC GaAs mHEMT power amplifier
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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