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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | McGrath, F. Varmazis, C. Kermarrec, C. Pratt, R. |
| Copyright Year | 1991 |
| Description | Author affiliation: Lowell Oper., MA, USA (McGrath, F.; Varmazis, C.; Kermarrec, C.; Pratt, R.) |
| Abstract | The development of a 16-watt single-pole double throw (SPDT) MESFET based switch is presented. The switch is unique in its use of a multi-gate FET device which can be fabricated on a standard production switch process. The power handling is nine times that of a single FET while occupying only 30% more die area. The device's bandwidth is comparable to that of a single FET while insertion loss is minimized using a novel N-plus (N+) intergate layer. A switch using the multi-gate device has achieved 0.4 dB insertion loss and 40 dB of isolation at L-band. |
| Starting Page | 839 |
| Ending Page | 842 |
| File Size | 302113 |
| Page Count | 4 |
| File Format | |
| ISBN | 0879425911 |
| ISSN | 0149645X |
| DOI | 10.1109/MWSYM.1991.147137 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-07-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | FETs Insertion loss Power semiconductor switches MESFETs Bandwidth Optical attenuators Gallium arsenide Radio frequency Parasitic capacitance Voltage |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electrical and Electronic Engineering Radiation |
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