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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Schindler, M.J. Chu, S.L. Kazior, T.E. Bertrand, A.M. Simon, K.M. |
| Copyright Year | 1990 |
| Description | Author affiliation: Raytheon Co., Lexington, MA, USA (Schindler, M.J.; Chu, S.L.; Kazior, T.E.; Bertrand, A.M.; Simon, K.M.) |
| Abstract | A single chip 2-20-GHz transmit/receive (T/R) module has been demonstrated. This MMIC (monolithic microwave integrated circuit) included a four-stage power amplifier chain, a four-stage low-noise amplifier chain, and two T/R switches. A selective ion implantation process was used. One implant profile was optimized for low-noise operation, and a second was optimized for power performance. All circuits were designed to be relatively insensitive to process variations to ensure adequate yield, despite the complexity of the chip. Distributed amplifiers were used throughout, and the T/R switches used a standard series-shunt FET configuration. All circuits were miniaturized to keep the total chip size small. The entire T/R is only 0.143 in*0.193 in (3.6 mm*4.9 mm). |
| Starting Page | 117 |
| Ending Page | 120 |
| File Size | 300012 |
| Page Count | 4 |
| File Format | |
| DOI | 10.1109/MWSYM.1990.99537 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1990-05-08 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MMICs Low-noise amplifiers Switches Microwave integrated circuits Monolithic integrated circuits Microwave amplifiers Switching circuits Ion implantation Implants Distributed amplifiers |
| Content Type | Text |
| Resource Type | Article |
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