NDLI: Electron excursion versus scattering mechanism in a cross-field diode

Content Provider	IEEE Xplore Digital Library
Author	Stutzman, Brooke S. Verboncoeur, John P.
Copyright Year	2014
Description	Author affiliation: Michigan State University, East Lansing, 48824 USA (Verboncoeur, John P.) \|\| United States Coast Guard Academy, 27 Mohegan Ave., New London, CT 06385 USA (Stutzman, Brooke S.)
Abstract	The operation of high-power microwave sources in relativistic magnetrons, magnetically insulated transmission lines for pulsed power systems, and Hull thrusters for space propulsion all rely on cross-field diodes. Electron migration from the cathode to the anode should be eliminated due to magnetic insulation, however, many electrons still transit the gap. This leads to the excitation of undesired modes and/or pulse shortening. Previous work has shown that not only does the presence of ions in a crossed-field gap increase the electron excursion toward the anode $region^{1},$ but electron scattering and ionization of the background species exacerbate this crossed-field $migration.^{2}$ We have also shown that the farther into the gap the scattering or ionization occurs, the greater the maximum excursion of the scattered or created $electron.^{3}$ In this work, we will break down the scattering problem further by looking at the scattering due to elastic collisions and excitation events separately. We will use a 1D PIC $code^{4}$ to compare the electron excursions based on scattering mechanism and scattering site. We will further compare the collision type with the expected energy change due to the collision mechanism.
Starting Page	1
Ending Page	1
File Size	145213
Page Count	1
File Format	PDF
ISBN	9781479927111
e-ISBN	9781479927135
DOI	10.1109/PLASMA.2014.7012568
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-05-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Scattering Magnetic separation Anodes Insulation Ionization Educational institutions
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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