NDLI: New materials and new analysis method for high-efficiency a-Si solar cells

Content Provider	IEEE Xplore Digital Library
Author	Nakano, S. Nakamura, N. Ninomiya, K. Tarui, H. Matsuyama, T. Nishikuni, M. Kiyama, S. Hishikawa, Y. Dohjo, H. Tsuda, S. Ohnishi, M. Kishi, Y. Kuwano, Y.
Copyright Year	1988
Description	Author affiliation: Sanyo Electr. Co. Ltd., Osaka, Japan (Nakano, S.; Nakamura, N.; Ninomiya, K.; Tarui, H.; Matsuyama, T.; Nishikuni, M.; Kiyama, S.; Hishikawa, Y.; Dohjo, H.; Tsuda, S.; Ohnishi, M.; Kishi, Y.; Kuwano, Y.)
Abstract	The authors present investigations of high-efficiency a-Si solar cells and describe a novel structure for large-area a-Si solar cell submodules. In order to improve the conversion efficiency, B(CH/sub 3/)/sub 3/ was applied as a new p-type doping gas, which led to a total-area efficiency of 9.60% for a 10 cm*10 cm integrated-type submodule. Furthermore, a novel analysis method, called the current-separated-analysis method, was developed to obtain key factors for high open-circuit voltage. Based on this analysis, microcrystalline SiC films were investigated using an original plasma chemical vapor deposition method, called the controlled-plasma-magnetron method. An open-circuit voltage of 0.98 V was obtained by using p-type microcrystalline SiC. In addition, a through-hole contact structure was developed for large-area solar cells. Using this structure, the active area can be increased and a high-efficiency submodule obtained.
Starting Page	123
Ending Page	128
File Size	347746
Page Count	6
File Format	PDF
DOI	10.1109/PVSC.1988.105671
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-09-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Optical films Boron Photonic band gap Doping Bonding Conductive films Conductivity Magnetic analysis Silicon carbide
Content Type	Text
Resource Type	Article

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