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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Narasinha, S. Rohatgi, A. |
| Copyright Year | 1997 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA (Narasinha, S.) |
| Abstract | Screen-printed Al and rapid thermal alloying have been combined in order to achieve an Al back surface field (Al-BSF) which lowers the effective back surface recombination velocity to 200 cm/s on 2.3 /spl Omega/cm Si. This Al-BSF process has been integrated into a high-efficiency, laboratory fabrication sequence as well as a high-throughput, industrial-type process in order to achieve solar cell efficiencies in excess of 19.0% and 17.0%, respectively, on 2.3 /spl Omega/cm FZ Si. For both process sequences, the efficiency values are 1-2 absolute percentage points higher than cells made with unoptimized Al-BSFs. The critical process requirements for optimal Al-BSF formation are: (1) the use of a fast ramp rate to reach the alloying temperature; and (2) thick film Al deposition prior to alloying. |
| Starting Page | 63 |
| Ending Page | 66 |
| File Size | 565291 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780337670 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.1997.653925 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1997-09-29 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Aluminum Silicon Alloying Rapid thermal processing Laboratories Fabrication Textile industry Photovoltaic cells Temperature Thick films |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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