NDLI: Atomic hydrogen cleaning of semiconductor photocathodes

Content Provider	IEEE Xplore Digital Library
Author	Sinclair, C.K. Poelker, B.M. Price, J.S.
Copyright Year	1997
Description	Author affiliation: Thomas Jefferson Nat. Accel. Facility, Newport News, VA, USA (Sinclair, C.K.)
Abstract	Negative electron affinity (NEA) semiconductor photocathodes are widely used for the production of polarized electron beams, and are also useful for the production of high brightness electron beams which can be modulated at very high frequencies. Preparation of an atomically clean semiconductor surface is an essential step in the fabrication of a NEA photocathode. This cleaning step is difficult for certain semiconductors, such as the very thin materials which produce the highest beam polarization, and those which have tightly bound oxides and carbides. Using a small RF dissociation atomic hydrogen source, we have reproducibly cleaned GaAs wafers which have been only degreased prior to installation in vacuum. We have consistently prepared very high quantum efficiency photocathodes following atomic hydrogen cleaning. Details of our apparatus and most recent results are presented.
Starting Page	2864
Ending Page	2866
File Size	304132
Page Count	3
File Format	PDF
ISBN	078034376X
DOI	10.1109/PAC.1997.752844
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-05-16
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Cathodes Electron beams Production Polarization Brightness Optical modulation Frequency Surface cleaning Fabrication
Content Type	Text
Resource Type	Article

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