NDLI: Structural and optical properties of H implanted ZnO

Content Provider	IEEE Xplore Digital Library
Author	Chan, K.S. Ye, J.D. Parkinson, P. Monakhov, E. Johansen, K.M. Vines, L. Svensson, B.G. Jagadish, C. Wong-Leung, J.
Copyright Year	2012
Description	Author affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia (Chan, K.S.; Ye, J.D.; Parkinson, P.; Jagadish, C.; Wong-Leung, J.) \|\| Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316, Norway (Monakhov, E.; Johansen, K.M.; Vines, L.; Svensson, B.G.)
Abstract	ZnO is a wide bandgap semiconductor with huge potential to fabricate optoelectronic devices operating in the UV region. However, it is still not possible to achieve p-type ZnO, with hydrogen suggested to be a shallow donor that contributes significantly to the n-type conductivity in as grown ZnO. A better understanding on the role of H in ZnO is needed to realise p-type doping in ZnO. In this research, we utilised multiple structural and optical techniques to study the effects caused by H implantation in ZnO. The H implanted region in single crystal ZnO substrate was characterised by X-Ray diffraction, photoluminescence spectroscopy, secondary ion mass spectroscopy and transmission electron microscopy. XRD results show that H implantation created deformed layers with strain increasing linearly with implantation dose. A blue shift is also observed from the UV photoluminescence emission of the H implanted ZnO.
Starting Page	219
Ending Page	220
File Size	671007
Page Count	2
File Format	PDF
ISBN	9781467330473
ISSN	10972137
e-ISBN	9781467330466
DOI	10.1109/COMMAD.2012.6472439
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-12
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide Hydrogen X-ray scattering Annealing Temperature measurement Doping Optical diffraction
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Sol - gel Ni doped ZnO films: Effect of annealing temperature

Studies of optical and crystal properties of ALD grown ZnO

Characterization of sol - gel in doped ZnO films: Structural and optical properties

Electrical and structural properties of Al-doped ZnO films

Effect of annealing on structural and optical properties of aluminum doped ZnO thin films

Electrical characteristics of sol-gel derived aluminum doped zinc oxide thin films at different annealing temperatures

Synthesis and optical properties of S-doped ZnO nanorotors

Preparation of Fe-doped ZnO ferromagnetic semiconductor by sol-gel method with hydrogen treatment

Electrical and structural properties of nanotetrapod zinc oxide thin films prepared with different deposition temperature

Structural and optical properties of H implanted ZnO

Similar Documents

Sol - gel Ni doped ZnO films: Effect of annealing temperature

Studies of optical and crystal properties of ALD grown ZnO

Characterization of sol - gel in doped ZnO films: Structural and optical properties

Electrical and structural properties of Al-doped ZnO films

Effect of annealing on structural and optical properties of aluminum doped ZnO thin films

Electrical characteristics of sol-gel derived aluminum doped zinc oxide thin films at different annealing temperatures

Synthesis and optical properties of S-doped ZnO nanorotors

Preparation of Fe-doped ZnO ferromagnetic semiconductor by sol-gel method with hydrogen treatment

Electrical and structural properties of nanotetrapod zinc oxide thin films prepared with different deposition temperature

Structural and optical properties of H implanted ZnO