NDLI: Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films

Content Provider	IEEE Xplore Digital Library
Author	Lim, H. McCallum, J.C. Stavrias, N. Marvel, R.E. Haglund, R.F.
Copyright Year	2012
Description	Author affiliation: School of Physics, University of Melbourne, Victoria, Australia (Lim, H.; McCallum, J.C.; Stavrias, N.) \|\| Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee, USA (Marvel, R.E.; Haglund, R.F.)
Abstract	Vanadium dioxide (VO) undergoes an insulator-metal transition (IMT) that involves drastic changes in its electrical and optical properties at relatively low critical temperature T ≈ 67°C [1]. The switching speed when triggered by an optical impulse is incredibly fast, within a femtosecond timescale [2]. Erbium $(Er^{3+})$ with a stimulated emission at the standard telecommunication wave-length of 1535nm has been used extensively in fiber-optic communication systems [3]. The combination of VO and $Er^{3+}$ could make an ultrafast optical switch that is capable of simultaneous signal amplification. In this work, we investigated the possibilities of making such a device, both theoretically and experimentally. Our experimental methods involve temperature-driven optical switching tests and photoluminescence (PL) spectroscopy on $Er^{3+}$ implanted VO thin films. The observations of the IMT of VO and the PL of $Er^{3+}$ in the thin films would be vital in determining whether the VO:Er system would work as an optical switch and amplifier. A range of implantation and post-annealing schemes were explored in an attempt to find the optimal processing conditions that would maximize the qualities of the optical switching and PL.
Starting Page	25
Ending Page	26
File Size	507435
Page Count	2
File Format	PDF
ISBN	9781467330473
ISSN	10972137
e-ISBN	9781467330466
DOI	10.1109/COMMAD.2012.6472342
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-12-12
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical switches Optical fibers Optical amplifiers Optical films Ultrafast optics Erbium
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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