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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jiayi Huang Chen, T.P. Tse, M.S. |
| Copyright Year | 2002 |
| Description | Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore (Jiayi Huang; Chen, T.P.; Tse, M.S.) |
| Abstract | This paper reports a comprehensive study of the edge charge trapping in the gate oxide overlapping the drain extension caused by Fowler-Nordheim (FN) injection and hot-carrier injection. In this study the edge charge trapping was determined by using a novel approach to analyze the change of the band-to-band tunneling current measured with a three-terminal gate-controlled-diode (GCD) configuration. It was found that both the FN injection (positive or negative) and hot-carrier injection led to positive edge charge trapping. On the other hand, a power-law dependence of the edge charge trapping on the stress time was always observed for all the cases. These results clearly show that the edge charge trapping has no strong dependence on the injection types and the injection polarities. |
| Starting Page | 409 |
| Ending Page | 412 |
| File Size | 174429 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780375718 |
| ISSN | 10972137 |
| DOI | 10.1109/COMMAD.2002.1237277 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-12-11 |
| Publisher Place | Australia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Hot carrier injection Tunneling Current measurement Stress Electron traps Charge measurement Leakage current Silicon Voltage MOS devices |
| Content Type | Text |
| Resource Type | Article |
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