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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jung-Hui Tsai |
| Copyright Year | 2002 |
| Description | Author affiliation: Dept. of Phys., Nat. Kaohsiung Normal Univ., Taiwan (Jung-Hui Tsai) |
| Abstract | Novel InGaP/GaAs co-integrated structures consisting of a heterojunction bipolar transistor and a field effect transistor are fabricated and demonstrated. For the HBT, the confinement effect for holes is increased and the potential spike at emitter-base (E-B) heterojunction is reduced significantly owing to the presence of a /spl delta/-doped sheet at the InGaP/GaAs junction. High current gain and low offset voltage are achieved. On the other hand, for a FET, an undoped InGaP gate layer is used to increase gate breakdown voltage, and a thin and heavy-doped GaAs channel is shown to enhance current drivability, transconductance, and linearity. For this structure, a wide gate voltage range larger than 3 V with the transconductance larger 150 mS/mm is obtained. |
| Starting Page | 365 |
| Ending Page | 368 |
| File Size | 210771 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780375718 |
| ISSN | 10972137 |
| DOI | 10.1109/COMMAD.2002.1237266 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-12-11 |
| Publisher Place | Australia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fabrication Gallium arsenide Heterojunction bipolar transistors FETs Linearity HEMTs MODFETs Etching Transconductance Voltage |
| Content Type | Text |
| Resource Type | Article |
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