NDLI: Formation of a nitrified hafnium oxide buffer layer on silicon substrate and GaN quantum well crystal growth for GaN-Si hybrid optical MEMS

Content Provider	IEEE Xplore Digital Library
Author	Sameshima, H. Wakui, M. Ito, R. Hu, F.R. Hane, K.
Copyright Year	2008
Description	Author affiliation: Dept. of Nanomech., Tohoku Univ., Sendai (Sameshima, H.; Wakui, M.; Ito, R.; Hu, F.R.; Hane, K.)
Abstract	We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, $HfO_{2}$ film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, $HfO_{2}$ film is surface-nitrified by a rf nitrogen plasma source of MBE to generate HfN layer. The morphology of the grown GaN crystal was better on the nitrified $HfO_{2}$ layer. The photoluminescence (PL) efficiency of GaN quantum well grown on the nitrified $HfO_{2}$ layer was better than that on Si substrate. As a simple hybrid lighting device structure, GaN grating on Si substrate was fabricated and the PL intensity from GaN diffraction grating was measured.
Starting Page	188
Ending Page	189
File Size	159554
Page Count	2
File Format	PDF
ISBN	9781424419173
DOI	10.1109/OMEMS.2008.4607892
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-08-11
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Films Silicon Substrates Diffraction gratings Crystals Diffraction hybrid MEMS HfO2 GaN quantum well lightning device
Content Type	Text
Resource Type	Article

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