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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Gianesello, F. Pilard, R. Lepilliet, S. Waldhoff, N. Durand, C. Boret, S. Martineau, B. Dambrine, G. Gloria, D. Rauber, B. Raynaud, C. |
| Copyright Year | 2010 |
| Description | Author affiliation: STMicroelectronics, TR&D, TPS Lab, 850 avenue Jean Monnet, 38926 Crolles, France (Gianesello, F.; Pilard, R.; Durand, C.; Boret, S.; Martineau, B.; Gloria, D.; Rauber, B.; Raynaud, C.) || IEMN, cité scientifique, avenue Poincaré, BP69, 59662 Villeneuve d'Ascq, France (Lepilliet, S.; Waldhoff, N.; Dambrine, G.) |
| Abstract | Today, measurement of 65nm CMOS [1] and 130nm-based SiGe HBTs [2] technologies demonstrate both fT (current gain cut-off frequency) and fmax (maximum oscillation frequency) higher than 200 GHz, which are clearly comparable to advanced commercially available 100nm III–V HEMT. This increase allows new millimeter wave (MMW) applications on silicon. One of the success keys is then the passive integration. In this paper, on-chip coplanar waveguides (CPWs), which have been achieved in STMicroelectronics advanced nanometric RF CMOS High Resistivity (HR) SOI (ρ> 1kΩ·cm) process, and characterized up to 325GHz are reported. Moreover, for the first time passive circuits working @ 325GHz have been achieved on silicon and characterized demonstrating state-of-the-art performances and good agreement with electric simulations. |
| Starting Page | 57 |
| Ending Page | 60 |
| File Size | 359033 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424472321 |
| e-ISBN | 9782874870163 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-09-28 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | EUROPEAN MICROWAVE ASSOC |
| Subject Keyword | Coplanar waveguides Silicon CMOS integrated circuits Band pass filters CMOS technology Substrates Bandwidth |
| Content Type | Text |
| Resource Type | Article |
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