NDLI: 79GHz BiCMOS single-ended and differential power amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Demirel, N. Kerhervé, E. Plana, R. Pache, D.
Copyright Year	2010
Description	Author affiliation: IMS, University of Bordeaux, 33405 Talence, France (Kerhervé, E.) \|\| STMicroelectronics, R&D, 38920 Crolles, France (Demirel, N.; Pache, D.) \|\| LAAS, University of Toulouse, 31077, France (Plana, R.)
Abstract	This paper presents the performance of 79GHz power amplifiers (PAs) for automotive short range radar (SRR) application. A single-ended four stage common emitter circuit topology and a differential PA with integrated baluns are fabricated using 0.13µm SiGe BiCMOS process. The design and the measured results of the monolithic integrated low-voltage PAs are reported. The 79GHz differential PA, which the design is based on the single-ended PA, delivers 18dBm of maximum output power and 13.5dBm output power at 1dB compression (P). The differential circuit achieves 21.5dB gain and shows 8.2% of power added efficiency (PAE) from a 1.8V supply voltage at 79 GHz. The power amplifier was fully integrated including matching elements, bias circuit and very small baluns. The chip occupies an area of $0.46mm^{2}$ and $0.7mm^{2}$ for the single-ended and differential configuration respectively.
Starting Page	1690
Ending Page	1693
File Size	601471
Page Count	4
File Format	PDF
ISBN	9781424472321
e-ISBN	9782874870163
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-28
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	EUROPEAN MICROWAVE ASSOC
Subject Keyword	Automotive SRR Application Millimeter Wave 79GHz Power Amplifiers BiCMOS SiGe
Content Type	Text
Resource Type	Article

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