NDLI: Performance of Radiation Detectors with the Pulse-Reset Readout Based on PentaFET

Content Provider	IEEE Xplore Digital Library
Author	Polushkin, V. Sharp, S.
Copyright Year	2006
Description	Author affiliation: Oxford Instruments Nano-Anal., High Wycombe (Polushkin, V.; Sharp, S.)
Abstract	X-ray nano-analytical tools impose stringent requirements on low-energy resolution and long-term peak stability of radiation detection systems. The front contact interface, noise performance of a read-out FET, dielectric properties of the feedback capacitor and baseline restoration algorithm play crucial roles in meeting these requirements. An electronic reset method based on PentaFET is well established in spectrometry with Si(Li) detectors. This paper shows how the same method offers distinct advantages for silicon drift chambers (SDD) when compared with other readout methods employing various continuous discharge mechanisms. While the resolution at low X-ray energies for the pn-junction SDDs is currently limited by charge collection, the quasi-Schottky junction Si(Li) detectors still offer the best prospects for low energy X-ray spectrometry. An electronic noise as low as 3.34e (30.39 eV) and 4.03e (36.11 eV) FWHM have been achieved with 10 $mm^{2}$ and 30 $mm^{2}$ area Si(Li) detectors coupled to the PentaFETtrade with no compromise on the low energy tailing. A carbon resolution of 49.95 eV has been measured with our new INCAPentaFET-x3trade 30 $mm^{2}$ detector as a part of the complete energy dispersive spectrometer mounted on the scanning electron microscope (SEM).
Starting Page	396
Ending Page	400
File Size	245054
Page Count	5
File Format	PDF
ISBN	1424405602
ISSN	10957863
DOI	10.1109/NSSMIC.2006.356183
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-29
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation detectors Spectroscopy Energy resolution Scanning electron microscopy Stability FETs Dielectrics Feedback Capacitors Silicon
Content Type	Text
Resource Type	Article

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