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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Matis, H.S. Bieser, F. Kleinfelder, S. Rai, G. Retlere, F. Hans Titter, G. Samuel, K.S. Wurzel, E. Wieman, H. Yamamoto, E. |
| Copyright Year | 2003 |
| Description | Author affiliation: Lawrence Berkeley Nat. Lab., CA, USA (Matis, H.S.) |
| Abstract | Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 /spl mu/m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe/sup 55/ exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector. |
| Starting Page | 259 |
| Ending Page | 263 |
| File Size | 2118269 |
| Page Count | 5 |
| File Format | |
| ISBN | 0780376366 |
| DOI | 10.1109/NSSMIC.2002.1239312 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-11-10 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Sensor arrays Noise reduction Circuit noise Circuit testing CMOS technology Detectors Semiconductor device measurement Iron Protons Leakage current |
| Content Type | Text |
| Resource Type | Article |
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