NDLI: Characterization of unintentionally-ordered superlattice resonant-tunneling diodes

Content Provider	IEEE Xplore Digital Library
Author	Seabaugh, A.C. Kao, Y.-C. Liu, H.-Y. Luscombe, J.H. Tsai, H.-L. Reed, M.A. Gnade, B.E. Frensley, W.R.
Copyright Year	1990
Description	Author affiliation: Texas Instrum. Inc., Dallas, TX, USA (Seabaugh, A.C.; Kao, Y.-C.; Liu, H.-Y.; Luscombe, J.H.; Tsai, H.-L.; Reed, M.A.; Gnade, B.E.; Frensley, W.R.)
Abstract	In the molecular-beam-epitaxy growth of ternary and quaternary InGaAs and In(GaAl)As alloys on InP it is observed that the layer composition is ordered in the direction of growth. This ordering is caused by the nonuniform distribution of beam fluxes at the rotating substrate with an ordering period determined by the combined effects of growth rate and substrate rotation rate. The effect of the ordering is to produce a strained-layer superlattice whose properties can be inferred from the current-voltage characteristics of resonant-tunneling diodes. The physical and electrical characteristics of these rotation-induced superlattices are described utilizing several one-dimensional theoretical approaches to calculate the miniband structure and interpret the experimental data.
Starting Page	416
Ending Page	423
File Size	1056036
Page Count	8
File Format	PDF
DOI	10.1109/ICIPRM.1990.203058
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-04-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Superlattices Resonant tunneling devices Diodes Substrates Molecular beam epitaxial growth Indium phosphide Indium gallium arsenide Laser sintering Space heating Electrons
Content Type	Text
Resource Type	Article

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