NDLI: Ion beam processing and rapid thermal annealing of InP and related compounds

Content Provider	IEEE Xplore Digital Library
Author	Pearton, S.J.
Copyright Year	1990
Description	Author affiliation: AT&T Bell Lab., Murray Hill, NJ, USA (Pearton, S.J.)
Abstract	The use of ion implantation to create doped regions or high-resistivity layers in InP, InGaAs and AlInAs is reviewed. Recent results on carbon implantation into these materials show that it behaves predominantly as a donor in InP but can give rise to p-type doping levels above 10/sup 19/ cm/sup -3/ in InGaAs and AlInAs. The diffusivity of carbon in all of these materials is measured at 800 degrees C. The use of a SiC-coated graphite susceptor provides degradation-free rapid thermal annealing of the In-based III-V semiconductors for high-temperature implant activation. Smooth, residue-free dry etching of these materials is obtained using CH/sub 4//H/sub 2/ mixtures. The use of microwave (2.45 GHz) electron cyclotron resonance (ECR) discharges minimizes the depth of lattice disorder resulting from dry etching, relative to conventional RF discharges. The characteristics of ion milling of InP are reviewed. It is seen that postmilling annealing cannot restore the rear-surface crystallinity after 500 eV Ar/sup +/ ion bombardment of InP, and wet chemical removal of approximately 650 A is necessary.
Starting Page	379
Ending Page	388
File Size	940736
Page Count	10
File Format	PDF
DOI	10.1109/ICIPRM.1990.203052
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-04-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ion beams Rapid thermal processing Rapid thermal annealing Indium phosphide III-V semiconductor materials Indium gallium arsenide Organic materials Dry etching Ion implantation Semiconductor device doping
Content Type	Text
Resource Type	Article

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