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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Montgomery, V. Kimpton, D.G. Swanson, J.G. |
| Copyright Year | 1991 |
| Description | Author affiliation: Dept. of Phys., Kingston Polytech., UK (Montgomery, V.) |
| Abstract | In/sub 0.53/Ga/sub 0.47/As (IGA)-SiO/sub 2/ interfaces are prepared by downstream plasma-enhanced chemical-vapor deposition (PECVD), which avoids exposing the semiconductor surface to the bombardment of the exciting plasma. The natural state of n- and p-type In/sub 0.53/Ga/sub 0.47/As in contact with SiO/sub 2/ prepared by downstream PECVD is electron accumulation. In the case of n-type material, hole accumulation is achieved with negative insulator fields, but for p-MIS structures, Fermi level pinning occurs at 0.41 eV from the valence band edge. Hole accumulation could not be established. The quiescent electron accumulated state of the p-type surface causes surface leakage in junctions that are passivated with this material. |
| Starting Page | 559 |
| Ending Page | 562 |
| File Size | 233677 |
| Page Count | 4 |
| File Format | |
| ISBN | 0879426268 |
| DOI | 10.1109/ICIPRM.1991.147438 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-04-08 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon compounds Frequency Capacitance-voltage characteristics Capacitance Testing Ohmic contacts Temperature measurement MOCVD Substrates Molecular beam epitaxial growth |
| Content Type | Text |
| Resource Type | Article |
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