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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wanlass, M.W. Coutts, T.J. Ward, J.S. Emery, K.A. Horner, G.S. |
| Copyright Year | 1991 |
| Description | Author affiliation: Solar Energy Res. Inst., Golden, CO, USA (Wanlass, M.W.; Coutts, T.J.; Ward, J.S.; Emery, K.A.; Horner, G.S.) |
| Abstract | The fabrication and characterization of thin-film InP solar cells designed for operation at high solar concentration ( approximately 100 suns) which have been prepared from similar device structures grown on GaAs substrates are discussed. The cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio (1-100 suns) and operating temperature (25 degrees -80 degrees C). From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 degrees C, a peak conversion efficiency of 18.9% (71.8 suns. AM0 spectrum) is reported. At 80 degrees C, the peak AM0 efficiency is 15.7% at 75.6 suns. Approaches for further improving the cell performance are discussed. |
| Starting Page | 40 |
| Ending Page | 47 |
| File Size | 524529 |
| Page Count | 8 |
| File Format | |
| ISBN | 0879426268 |
| DOI | 10.1109/ICIPRM.1991.147289 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1991-04-08 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Indium phosphide Photovoltaic cells Substrates Gallium arsenide Thermal conductivity Sun Fabrication Temperature Costs |
| Content Type | Text |
| Resource Type | Article |
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