NDLI: Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers

Content Provider	IEEE Xplore Digital Library
Author	Jeng-Ya Yeh Tansu, N. Mawst, L.J.
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA (Jeng-Ya Yeh; Tansu, N.; Mawst, L.J.)
Abstract	1.26-/spl mu/m-emitting MOCVD-grown InGaAsN single quantum-well lasers with barriers of E/sub g/=1.62 eV InGaAsP exhibit a room-temperature threshold current density of 440 A/cm/sup 2/ and a characteristic temperature To as high as 128 K and 98 K in the temperature ranges of 10-50/spl deg/C and 50-100/spl deg/C, respectively. A growth pause annealing technique is found to be critical for achieving high photoluminescence intensity. Higher-bandgap barrier materials increase the valence band offset and lead to suppression of carrier leakage, which potentially results in improved temperature characteristics of the InGaAsN quantum-well lasers.
Starting Page	269
Ending Page	272
File Size	253255
Page Count	4
File Format	PDF
ISBN	0780377044
DOI	10.1109/ICIPRM.2003.1205367
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum well lasers Vertical cavity surface emitting lasers Surface emitting lasers Chemical lasers Optical materials Gallium arsenide Conducting materials Temperature distribution Annealing Photoluminescence
Content Type	Text
Resource Type	Article

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Long wavelength MOCVD-grown InGaAsN-InGaAsP-GaAs quantum-well lasers