NDLI: MOVPE growth and characterization of long-wavelength emitting quantum dots based lasers at 300 K

Content Provider	IEEE Xplore Digital Library
Author	Saint-Girons, G. Garnache, A. Patriarche, G. Sagnes, I.
Copyright Year	2003
Description	Author affiliation: Lab. de Photonique et de Nanostructures, CNRS, Marcoussis, France (Saint-Girons, G.; Garnache, A.; Patriarche, G.; Sagnes, I.)
Abstract	We observed laser operation at 300 K on the 1st excited transition of a Low-Pressure Metalorganic Vapor Phase Epitaxy grown long wavelength emitting quantum dots array inserted in an edge emitting structure, at 1.14 /spl mu/m for a cavity length of 495 /spl mu/m. The guiding structure presents very low absorption losses (/spl alpha//sub i/ = 1.5 cm/sup -1/). The threshold current density was estimated to be around 1200 A.cm/sup -2/. Due to injection problems in that particular structure, we could not observe laser operation for cavity length larger than 500 /spl mu/m, but we estimated that by lengthening the cavity to about 1.1 mm, laser operation should be observed at 1.25 /spl mu/m, on the ground transition of the quantum dots. Laser operation is observed simultaneously on the 1st excited transition of the quantum dots and on the wetting layer, at 1.14 and 0.97 /spl mu/m respectively. We attributed this phenomenon to an inefficient diffusion of the charge carriers in the wetting layer, probably related to the presence of point defects.
Starting Page	85
Ending Page	88
File Size	232930
Page Count	4
File Format	PDF
ISBN	0780377044
DOI	10.1109/ICIPRM.2003.1205318
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-05-12
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum dot lasers Epitaxial growth Epitaxial layers Laser transitions Laser excitation Phased arrays Optical arrays Absorption Threshold current Charge carriers
Content Type	Text
Resource Type	Article

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