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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Vai, M. Zhimin Xu Prasad, S. |
| Copyright Year | 1993 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA (Vai, M.; Zhimin Xu; Prasad, S.) |
| Abstract | A neural network approach is developed to qualitatively model the relationship between fabrication process parameters and the characteristics of a heterojunction bipolar transistor (HBT). An equivalent circuit model is used as an intermediate representation format for this objective. The goal of this research project is to develop a method that can predict and explain changes in the behavior of a device without the need for precise problem formulations and computationally intensive methods. The primary use of such a neural network model is in a reverse modeling process which performs device optimization. |
| Starting Page | 219 |
| Ending Page | 227 |
| File Size | 448370 |
| Page Count | 9 |
| File Format | |
| ISBN | 0780308948 |
| DOI | 10.1109/CORNEL.1993.303090 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-08-02 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Heterojunction bipolar transistors Neural networks Equivalent circuits Fabrication Analog computers Computer networks Concurrent computing Distributed computing Semiconductor process modeling Frequency |
| Content Type | Text |
| Resource Type | Article |
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