NDLI: Design and fabrication of thermally-stable AlGaAs/GaAs microwave power HBTs

Content Provider	IEEE Xplore Digital Library
Author	Bayraktaroglu, B. Fitch, R. Barrette, J. Scherer, R. Kehias, L. Huang, C.I.
Copyright Year	1993
Description	Author affiliation: Wright Lab., Solid State Electron. Directorate, Wright-Patterson AFB, OH, USA (Bayraktaroglu, B.; Fitch, R.; Barrette, J.; Scherer, R.; Kehias, L.; Huang, C.I.)
Abstract	Record power density performance of AlGaAs/GaAs microwave power heterojunction bipolar transistors (HBTs) was accomplished through the use of novel design and fabrication techniques. Thermally-stable operation of HBTs up to their electronic limitation (10 mWspl mu/m/sup 2/ output power density at 10 GHz with 0.6 W CW output power, 7.1 dB gain and 60% PAE) was attained. The design of the HBT was based on a detailed electro-thermal device analysis which revealed the necessity to provide an effective heat transfer path between heat sources in a multi-emitter power device. Excess heat was transferred out of the device using thermal shunt and thermal lens techniques. The thermal resistance of the device was lowered by a factor of 2.5-3 compared to conventional devices.
Starting Page	83
Ending Page	92
File Size	694074
Page Count	10
File Format	PDF
ISBN	0780308948
DOI	10.1109/CORNEL.1993.303072
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-08-02
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Gallium arsenide Heat transfer Electromagnetic heating Heterojunction bipolar transistors Power generation Thermal lensing Thermal resistance Microwave theory and techniques Gain
Content Type	Text
Resource Type	Article

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