NDLI: High-performance AlInAs/GaInAs/InP DHBT X-band power cell with InP emitter ballast resistor

Content Provider	IEEE Xplore Digital Library
Author	Chen, M. Nguyen, C. Liu, T. Rensch, D.
Copyright Year	1997
Description	Author affiliation: Hughes Res. Labs., Malibu, CA, USA (Chen, M.; Nguyen, C.; Liu, T.; Rensch, D.)
Abstract	We report for the first time large-signal performance of a multi-finger AlInAs/GaInAs/InP DHBT power cell with epitaxial InP emitter ballast resistors. The region of safe operation is extended using epitaxial InP emitter resistor structures. The thermal stability of power cells with this structure is increased compared with devices with similar layer structures but without the ballast epi-resistors. The power cell consists of ten 2-/spl mu/m/spl times/30-/spl mu/m emitter fingers. Under DC bias, the device is unconditionally stable up to J/sub c/=5/spl times/10/sup 4/ Acm/sup -2/ at V/sub ce/=6 V, and the upper range of bias is limited by burn-out (on unthinned wafer) rather than by current hogging. An output power of 1.6 W, corresponding to a high power density of 5.3 W/mm, and a power-added efficiency of 62% were measured on wafer at 9 GHz at V/sub cc/=12 V under class B CW operation. The output power can be increased at the expense of PAE. At a PAE of 54%, an output power of 1.9 W, corresponding to an impressive power density of 6.3 W/mm is obtained.
Starting Page	573
Ending Page	582
File Size	916598
Page Count	10
File Format	PDF
ISBN	0780339703
ISSN	10794700
DOI	10.1109/CORNEL.1995.482554
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-08-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Electronic ballasts Resistors Fingers Power generation Temperature Thermal conductivity Microwave devices Impedance Laboratories
Content Type	Text
Resource Type	Article

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