NDLI: Direct assessment of relaxation and defect propagation in different thin single Ge/Si and step-graded Si/sub 1-x//Si buffer layers for RF and microwave applications

Content Provider	IEEE Xplore Digital Library
Author	Yousif, M.Y.A. Nur, O. Karlsteen, M. Willander, M. Patel, C.J. Hernandez, C. Campidelli, Y. Bensahel, D. Kyutti, R.N.
Copyright Year	2000
Description	Author affiliation: Dept. of Phys., Goteborg Univ., Sweden (Yousif, M.Y.A.)
Abstract	We have used the direct and strain sensitive double crystal and multi-crystal high resolution x-ray diffraction to perform double crystal rocking curves (DC-HRRC) and triple axis high resolution 2-D reciprocal space mapping (2D-RSIM) respectively, as the main tool to assess the relaxation and defect propagation in Ge and Si/sub 1-x/ relaxed buffers layers grown on Si [001] substrates. The present study represents one of the first studies regarding the direct extraction and assessment of relaxation parameters and defect propagation in relaxed buffer layers having top pure Ge fully relaxed layer. This technique allows the direct and accurate determination of the mismatches of the lattice parameters parallel and perpendicular to growth directions with an accuracy of 10/sup -5/. The investigated heterostructures include Ge/Si single epitaxial relaxed buffer layer (SE-RBL) and step graded multi layer Si/sub 1-x//Si relaxed buffer layer (SG-RBL) with Ge fractions of x=0.15, 0.44 and final pure Ge top layer. Moreover, the effect of post processing annealing is investigated for different temperature time cycles for some of these structures. The unique thin total grown thickness (maximum of 6 /spl mu/m) actually enables the use of the high resolution X-ray diffraction.
Starting Page	276
Ending Page	280
File Size	362275
Page Count	5
File Format	PDF
ISBN	078036550X
DOI	10.1109/EDMO.2000.919073
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-14
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Buffer layers X-ray diffraction Annealing Lattices Temperature Optical diffraction Optical buffering Microwave propagation Radio frequency Microwave photonics
Content Type	Text
Resource Type	Article

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