NDLI: Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Borgarino, M. Bary, L. Kuchenbecker, J. Tartarin, J.G. Lafontaine, H. Kovacic, T. Plana, R. Graffeuil, J. Fantini, F.
Copyright Year	2000
Description	Author affiliation: Dipartimento di Scu dell'Ingegneria, Modena Univ., Italy (Borgarino, M.)
Abstract	In this paper the effects of hot carrier on the correlation resistance in SiGe HBT's are investigated. Before the stress the correlation resistance was found to be comparable with the access series resistance while, after the stress, the correlation resistance decreases and the access series resistance increases. This increase suggests that the stress degrades the access regions of the transistor. On the other hand, the observed behaviour of the correlation resistance is explained in terms of an intrinsic noise source, /spl Pi/-topology based low frequency noise model. It is shown that the correlation resistance is a useful indicator of surface recombination mechanisms. In particular, one intrinsic noise source in the model is associated with the degradation of the extrinsic base surface around the emitter perimeter.
Starting Page	8
Ending Page	13
File Size	515864
Page Count	6
File Format	PDF
ISBN	078036550X
DOI	10.1109/EDMO.2000.919018
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-14
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carrier effects Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors Low-frequency noise Noise figure Noise generators Stress Degradation Surface resistance
Content Type	Text
Resource Type	Article

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