NDLI: Study of dynamic behavior of /spl delta/-doped HMSM photodetector

Content Provider	IEEE Xplore Digital Library
Author	Xia Zhao Hung-jen Huang Xiying Chen Nabet, B. Cataldo, A. Cola, A. Quaranta, F.
Copyright Year	2003
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA (Xia Zhao; Hung-jen Huang; Xiying Chen; Nabet, B.)
Abstract	We have previously reported the time response of a /spl delta/-doped heterostructure metal-semiconductor-metal photodetector (HMSM-PD) with FWHM of 11 ps for a 4 /spl mu/m finger gap device. Comparison of the /spl delta/-doped and undoped devices shows improved performance due to the /spl delta/-doping. In this paper, we simulate the device dynamics behavior using Ramo's theorem. Results show that the introduction of a /spl delta/-doping layer significantly changes the 2D potential and field profiles from horizontally oriented to vertically oriented ones due to the screening effect of the highly crowded two dimensional electron gas (2DEG) formed along the interface of the heterojunction, which reduces the carrier travel distance, hence the transit time of carriers in the device. With this knowledge, we expect to achieve high speed performance without further scaling down of the device.
Starting Page	81
Ending Page	86
File Size	705338
Page Count	6
File Format	PDF
ISBN	0780378245
DOI	10.1109/IMOC.2003.1244835
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-09-20
Publisher Place	Brazil
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodetectors Fingers Gallium arsenide Distributed Bragg reflectors Resonance Schottky barriers Geometry Absorption Cathodes Anodes
Content Type	Text
Resource Type	Article

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