NDLI: Etching issues in etching compound and Si-based device fabrication

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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468)

Intraocular retinal prosthesis: microelectronics meets medicine

Network device technologies for ubiquitous IT in the 21st century

CMOS design challenges to power wall

A new PSM system: SCAAM with Phase Phirst!

Implementation of phase shift focus monitor under modified illumination [photolithography]

The double exposure strategy using OPC and simulation and the performance on wafer with sub-0.10 /spl mu/m design rule in ArF lithography

Rigorous modeling of scattered light in EUV cameras

Portable biochemical detection systems using microfluidic and BioMEMS devices

Integrating combinatorial synthesis on a single glass microchip

Inner-channel preparation of polymer membrane by interfacial polycondensation

Nanohole formation by FIB and its application to biomolecular sensors

Prototype of micro flow cell for multi-analyte sandwich immunoassay

Development of high performance immunoassay system using multichannel microchip

Etching issues in etching compound and Si-based device fabrication

Nano-topography removal employing numerically controlled local dry etching

Ultra-smooth surface preparation with gas cluster ion beams

Development of 3-D focused-ion-beam (FIB) etching methods for nano- and micro-technology application

Next generation dielectric etching technology

Development of low energy e-beam proximity projection lithography: LEEPL

Progress and preliminary results on EB stepper

Proximity effect correction for large patterns in electron-beam projection lithography

Influence of SOI wafer stress properties on placement accuracy of stencil masks

Resolution of 1:1 electron stepper lithography based on patterned cold cathode

MEMS micro-switches for use in DC, RF, and optical applications

Microbubble actuators - an introduction to microscale thermal fluid engineering

Microfabricated electrical connector for AFM probes with integrated sensor/actuator

Long Ni cantilever fabrication with new sacrificial process

Characterization of thermopile based on CMOS materials and post CMOS micromachining

Tunable fiber Bragg grating combined with twisting microactuator

SPM application of carbon nanotubes: probes and tweezers

Laser-SQUID microscopy: novel nondestructive and non-electrical-contact tool for inspection, monitoring and analysis of LSI-chip-electrical-defects

A new inspection method for PSM on DUV inspection light source

Total-electron-yield x-ray standing-wave measurements of multilayer x-ray mirrors for the interface structure evaluation

Low loss optical coat for 157 nm lithography

Inspection for critical issue of floating body effects in SOI-MOSFET using nuclear particles

Investing in nanotechnology

Nanotechnology toward DNA electronics

New prospects for microelectronics: carbon nanotubes

Progress and future directions of the US EUV lithography program

ASML program on EUVL: an update

Fine pattern replication using ETS-1 three-aspherical mirror imaging system

Analysis of multilayer structure for reflection of extreme ultra-violet wavelength

Simulation of light scatter from defects in EUV mask blanks

"Actinic-only" defects in EUVL mask blanks-native defects, barely detectable by visible-light inspection

Mo/Si multilayers with different barrier layers for applications as EUV mirrors

Dynamics of mass-limited laser plasma targets as sources for EUVL

Imprint lithography for mass production

Easy removal of mold for imprint lithography by ion beam modification of photoresist surface

Influence of thermal properties of polymers on NanoImprint Lithography performance

Evaluation of press-uniformity using a pressure sensitive film and calculation of wafer distortions caused by mold press in imprint lithography

Uniformity in patterns imprinted using photo-curable liquid polymer

Nano chamber fabrication on an acrylic plate by direct nano imprint lithography using quartz mold

Room temperature nanoimprint technology

Precise control of Si[001] initial oxidation by translational kinetic energy of O/sub 2/ molecules

Oxygen pressure dependence of the initial oxidation on Si[001] surface studied by AES combined with

Characteristics of hard DLC film formed by gas cluster ion beam assisted deposition

Optical film formation with O/sub 2/ cluster ion assisted deposition

Synthesis of microcrystalline silicon thin films using a low-pressure microwave plasma

Internal modification of transparent materials using micro and nanotechnology

Suppress copper diffusion through barrier metal-free structure by using ion implantation into low-k material

Hydrogen diffusion into the bulk at nearly ideal H-terminated region on Si[100] surfaces

Thermal distortion model of mask for extreme ultraviolet lithography during periodic scanning exposure

Rigorous simulation of line-defects in EUV masks

Thin layer resist imaging for EUVL

Damage resistant and low stress EUV multilayer mirrors

Low dielectric constant SILK films as bottom antireflective coating layers for both KrF and ArF lithography

Characteristics of the line width variation due to lens flare and its dependency on optical parameters

Top antireflective coating process for 193 nm lithography

Approaching to chemical stability of embedded material for attenuated phase-shifting mask and application of high transmittance AttPSM for sub-0.1 /spl mu/m contact hole pattern in 193 nm lithography

Image formation by continuous writing with multi-beam in X-ray nanolithography

Monte Carlo simulation of substrate photoelectrons in hard X-ray lithography and the effect of buffer layer

Combination of SiDWEL process and conventional electron sensitive resists in a complementary technique for the fabrication of X-ray masks

Particle contamination control technology in electron beam mask writing system for next-generation mask fabrication

Ion beam lithography using membrane masks

Analysis of electron transmission properties from EPL membrane masks

Line edge roughness of developed resist at low dose electron beam exposure

Mask charging phenomena during electron beam exposure in the EPL system

EPL proximity and Coulomb effect correction by mask bias method

X-ray absorption fine structure measurement using a scanning capacitance microscope: trial for selective observation of trap centers in the /spl sim/nm region

Spin-polarized scanning tunneling microscopy using optically pumped GaAs tips

Dot-array resist patterning using scanning probe microscopy with a hybrid current-voltage control method

Nanostructure construction in single-walled carbon nanotubes by AFM manipulation

Formation of aluminum nano-dot array by the use of nano-indentation and anodic oxidation

Direct patterning on low dielectric constant materials with electron beam lithography

Electrical and geometrical properties of a Si quantum nanowire device fabricated by an inorganic EB resist process

Fabrication of planar-type ferromagnet/nonmagnet/ferromagnet structures by using multi-angle deposition

Micro-structuring of SiO/sub 2/ thin film on Si by a femto-second laser pulse

Patterned deposition of metallic nanoclusters from solution using synchrotron radiation

Influence of substrate roughness on the formation of self-assembled monolayers (SAM) on Silicon [100]

Effects of doping methods on characteristics of InAs quantum dots

Nano-imprint lithography using replicated mold by Ni electro plating

Prototyping of field emitter array using focused ion and electron beams

Ultra fine multi-line patterning based on sidewall patterning technique

Improvement of imprinted pattern uniformity using sapphire mold

Development of bio-MEMS devices for single cell expression analysis

A polymeric capillary electrophoretic microfluidic device for separation and electrospray ionization of small molecules

DNA melting analysis on a microchip after PCR amplification

Field emission from nano-protrusion fabricated using nano-stamp technique

Subwavelength antireflection gratings for light emitting diodes and photodiodes fabricated by fast atom beam etching

Preparation of thick PZT film by electrostatic spray deposition (ESD) for the application in micro-system technology

Fabrication of thick silicon dioxide air-bridge for RF application using micromachining technology

Design and fabrication of 1D and 2D micro scanners actuated by double layered PZT bimorph beams

Characteristics of optical thin film filters containing nanometer-size particles

Etching of spin-on-glass films by synchrotron radiation

Effects of LDD spacer etches on spacer widths, subsequent oxide growths and yield enhancement

Comparison of Pt etching characteristics with SF/sub 6/ and Cl/sub 2/ plasma chemistries

Holographic grating formation by wet etching in amorphous As/sub 40/Ge/sub 10/Se/sub 15/S/sub 30/ thin film

The surface treatment with NH/sub 3/ for GaN grown by a sublimation technique

High-brightness semiconductor lasers fabricated with improved dry-etching technology for ultra-smooth laser facets

Improved crystalline quality of GaN by substrate ion beam pre-treatment

Implantation of N-ion on sapphire substrate for GaN epilayer

Thin polymer films deposition on different substrates by electron beam polymerization of monomers from vapour phase

Simulation parameter effects on critical dimension and sensitivity of 193 nm Chemically Amplified Resist

Thermal flow and chemical shrink techniques for sub-100 nm contact hole fabrication in electron beam lithography

Reduction of substrate alkaline contamination by utilizing multi-layer bottom antireflective coating structures in ArF lithography

Study on radiation-induced reaction in microscopic region for basic understanding of electron beam patterning in lithographic process (I) - Development of subpicosecond pulse radiolysis and relation between space resolution and radiation-induced reactions of onium salt

Study on radiation-induced reaction in microscopic region for basic understanding of electron beam patterning in lithographic process (II) relation between resist space resolution and space distribution of ionic species

Studies on the possibility of highly sensitive PMMA based chemically amplified resists for EB and X-ray lithography

Design and performance of a normal-incidence optical critical dimension metrology system

Thickness measurements of ultra-thin films using AFM

A Monte Carlo study of magnetic domain images in a spin-polarized scanning electron microscope

New AFM imaging for high aspect structures: STI and contact holes

Phase shifting interferometer for the characterization of nanodevices

Design and evaluation of an electron objective lens system with two lenses and two deflectors

Sub-nanometer resolution ultrasonic motor for 300 mm wafer lithography precision stage

A fast and simplified technique of proximity effect correction for ULSI patterns in electron-beam projection lithography

Fluidic self-assembly of semiconductor devices: a promising new method of mass producing flexible circuitry

Lens fabrication on optical fiber end using photolithography

Fabrication of single crystal silicon field emitter array on glass substrate

Monolithic integration of Si field emitter arrays with n-MOSFET circuits

Synchrotron radiation micro lithography and etching (SMILE) for MEMS fabrication

Narrowband spectrum effect on resolution enhancement for 50-nm pattern printing by proximity x-ray lithography

Analysis of resist LER for the patterns replicated by proximity X-ray lithography

Fluoropolymer platforms for 157 nm resist applications

Comparision between alicyclic resist platforms in advanced 193-nm and 157-nm lithography

Binary solvent developer for cross-linked positive-tone resists

Fourier analysis of line-edge roughness in calixarene fine patterns

Si single-electron CCD

Nano-electronics in a multiwall carbon nanotube

Control of the positioning of self-assembling Si quantum dots on ultrathin SiO/sub 2//c-Si by using scanning probe

Structure and resonant characteristics of amorphous carbon pillars grown by FIB-CVD

Role of inserting layer controlling wavelength in InGaAs quantum dots

Fabrication of channel waveguides in 2D photonic crystals of Si nanopillars

Accuracy evaluation of point diffraction interferometer for EUVL mirror

Compact high power laser-plasma X-ray source for lithography

Extending and manipulating long DNA molecules for high resolution analysis-development of a novel nanobiotechnological tool for atomic force microscopy

Field emission characteristics of screen-printed carbon nano tube after laser irradiation

Electrical transport properties of poly(G)-poly(C) DNA molecules

Measurement of adhesive force between mold and photo-curable resin in imprint technology

A study of line edge roughness in chemically amplified resist for low energy electron-beam lithography

A new industrial tool combining VUV spectroscopic ellipsometry and grazing X-ray reflectance to characterize 157 nm structures

157 nm lithography for 70 nm technology node

Development of F2 exposure tools

A study of 157 nm resist design by using highly precise theoretical calculation of absorption spectra

Evaluation of high transmittance attenuated phase shifting mask for 157 nm lithography

Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

Etching issues in etching compound and Si-based device fabrication

Content Provider	IEEE Xplore Digital Library
Author	Wilkinson, C.D.W. Rahman, M.
Copyright Year	2001
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Glasgow Univ., UK (Wilkinson, C.D.W.)
Abstract	Summary form only given. Ion-induced damage is an important issue in III-V and Si-Ge devices. The principal cause of damage is the introduction of traps and point defects by ions penetrating into the semiconductor. At the low ion energies used in modem process technology (100 eV say) the bulk of the ions remain on or within a few nm of surfaces. However, some ions channel along the III direction and so penetrate into the semiconductor to a depth of 30 to 50 nm. In HEMT's with f/sub T/ greater than 100 GHz, the active current carrying layer is only 30 to 50 nm below the surface. In compound semiconductor it is usually impossible to anneal such damage away. An analytic model of this channelling has been developed and its accuracy checked by measuring the penetration of ions produced by a very low energy implantation. An important finding is that while atomic ions (e.g. Cl/sup +/) can channel and so cause damage molecular ions (e.g. Cl/sub 2//sup +/) do not. This can be used to predict processes that will be suitable for low damage.
Sponsorship	Japan Soc. Appl. Phys.
File Size	45318
File Format	PDF
ISBN	4891140178
DOI	10.1109/IMNC.2001.984052
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-10-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Applied Physics
Subject Keyword	Etching Fabrication Nanoelectronics Electron traps Annealing Energy measurement Atomic measurements
Content Type	Text
Resource Type	Article

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