NDLI: Parameter extraction methodology for amorphous IGZO thin film transistors

Content Provider	IEEE Xplore Digital Library
Author	Tsormpatzoglou, A. Hastas, N.A. Hatalis, M.K. Dimitriadis, C.A.
Copyright Year	2014
Description	Author affiliation: Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece (Tsormpatzoglou, A.; Hastas, N.A.; Dimitriadis, C.A.) \|\| ECE Dept., Lehigh Univ., Bethlehem, PA, USA (Hatalis, M.K.)
Abstract	Based on a Gaussian distribution for the subgap states of amorphous InGaZnO transistors, a new methodology is developed for the extraction of the electrical parameters of the transistors. The calculated non-linear Y-function is transformed to a linear one, adopting a mobility model that fits the classical methodology of Y-function traditionally used in MOSFETs. The efficiency of the new Y-function is verified in experimental data, for the extraction of the electrical parameters of the transistor as the threshold voltage, the on-voltage, the mobility, and the characteristic decay energies of the exponential distributions used to simulate the Gaussian distribution. All the transfer characteristics are reconstructed using only the transfer characteristic for $V_{d}=0.1V$ and the extracted electrical parameters of the transistor.
Starting Page	235
Ending Page	238
File Size	245275
Page Count	4
File Format	PDF
ISBN	9781479952953
e-ISBN	9781479952960
DOI	10.1109/MIEL.2014.6842130
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-05-12
Publisher Place	Serbia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Mathematical model Equations Threshold voltage Physics Exponential distribution
Content Type	Text
Resource Type	Article

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