NDLI: Instabilities in modern bipolar transistors during the turn-off under inductive loads

Content Provider	IEEE Xplore Digital Library
Author	Busatto, G. Vitale, G.F. Fratelli, L.
Copyright Year	1995
Description	Author affiliation: Dept. of Electron. Eng., Naples Univ., Italy (Busatto, G.; Vitale, G.F.; Fratelli, L.)
Abstract	The different instabilities exhibited by power BJTs during inductive turn-off are classified and then studied theoretically by means of a 2-D simulator in which the device is simulated within a realistic external circuit, and experimentally by means of a non-destructive method. It is shown that many instabilities originate from an interaction between electric field and charge within a single cell, which causes transit time oscillation phenomena. The role of the stray capacitance of the circuit in favouring these instabilities is described. Other kinds of instability cannot be understood by studying a single cell but rather require an account for the interactions between cells. An "Instabilily Map" is finally used as a synthetic picture of the device behaviour which ensures an easy way for linking device behaviour to its physical features.
Starting Page	391
Ending Page	396
File Size	704605
Page Count	6
File Format	PDF
ISBN	0780327861
DOI	10.1109/ICMEL.1995.500898
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1995-09-12
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors Electric breakdown Circuit simulation Avalanche breakdown Impact ionization Modems Capacitance Joining processes Medium voltage Costs
Content Type	Text
Resource Type	Article

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