NDLI: Accurate modeling of dynamic variability of SRAM cell in 28 nm FDSOI technology

Content Provider	IEEE Xplore Digital Library
Author	El Husseini, J. Subirats, A. Garros, X. Makoseij, A. Thomas, O. Reimbold, G. Huard, V. Cacho, F. Federspiel, X.
Copyright Year	2014
Description	Author affiliation: CEA-Leti, Grenoble, France (El Husseini, J.; Subirats, A.; Garros, X.; Makoseij, A.; Thomas, O.; Reimbold, G.) \|\| STMicroelectron., Crolles, France (Huard, V.; Cacho, F.; Federspiel, X.)
Abstract	The paper presents a new methodology to model the dynamic variability of SRAM cell in 28nm FDSOI technology. This approach can be easily integrated into SPICE and used for circuit degradation simulation. It is based on two successful models that showed good correlation with experimental data. Using only stress measurements made at transistors level we are able to simulate the degradation obtained on SRAM circuit level. Based on this methodology, fast BTI stress measurements were carried out on SRAM-sized MOSFETs using a fast measure/stress/measure sequences. Using these measurements at transistor level we could validate our modeling methodology by comparing this analytical approach to experimental data. Finally, simulations results obtained on a 0.197 $μm^{2}SRAM$ cell and calibrated to pull-up and pull-down stress measurements are presented. The bit-cell read margin is evaluated using the Supply Read Retention Voltage (SRRV) metric and resulting ΔSRRV cumulative distributions obtained from 4000 MC simulations are shown.
Sponsorship	IEEE Electron Dev. Soc.
Starting Page	41
Ending Page	46
File Size	1723417
Page Count	6
File Format	PDF
ISBN	9781479921935
ISSN	10719032
e-ISBN	9781479921928
DOI	10.1109/ICMTS.2014.6841466
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-03-24
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress SRAM cells Stress measurement Integrated circuit modeling Analytical models MOS devices Degradation read stability Dynamic variability simulation BTI stress FD SOI modeling Supply Read Retention Voltage
Content Type	Text
Resource Type	Article

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