NDLI: Extraction procedure for emitter series resistance contributions in SiGeC BiCMOS technologies

Content Provider	IEEE Xplore Digital Library
Author	Stein, F. Huszka, Z. Derrier, N. Maneux, C. Celi, D.
Copyright Year	2014
Description	Author affiliation: ams AG, Unterpremstatten, Austria (Huszka, Z.) \|\| STMicroelectron., Crolles, France (Stein, F.; Derrier, N.; Celi, D.) \|\| IMS, Univ. Bordeaux I, Talence, France (Maneux, C.)
Abstract	The accurate determination of the emitter series resistance $R_{E}$ has been topic for numerous investigations throughout the development of modern bipolar device technologies. A good knowledge of the parasitic resistances of the device under test is important due to the apparent voltage drops over these resistors in high current operation. Opposed to the base and collector resistance today there are no appropriate individual test structures that allow for a precise determination of the emitter resistance. In this work we present the application of a new extraction method to a recent SiGeC HBT device technology for mmW applications. The new method allows a precise parameter determination of the desired resistance values without adding additional cost for a dedicated test structure.
Sponsorship	IEEE Electron Dev. Soc.
Starting Page	20
Ending Page	23
File Size	296625
Page Count	4
File Format	PDF
ISBN	9781479921935
ISSN	10719032
e-ISBN	9781479921928
DOI	10.1109/ICMTS.2014.6841462
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-03-24
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Electrical resistance measurement Frequency measurement Geometry Data mining Heterojunction bipolar transistors RF device characterization Emitter Series Resistance Device Modeling Parameter Extraction SiGe HBT BiCMOS
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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