NDLI: 1.3 /spl mu/m InGaAsN quantum well vertical cavity surface emitting lasers on GaAs substrates

Content Provider	IEEE Xplore Digital Library
Author	Klem, J.F. Choquette, K.D. Fischer, A.J. Blum, O. Geib, K.M. Naone, R.L. Gait, D.
Copyright Year	2000
Description	Author affiliation: Sandia Nat. Labs., Albuquerque, NM, USA (Klem, J.F.)
Abstract	We report characteristics of 1.3 /spl mu/m electrically pumped InGaAsN quantum well VCSELs grown on GaAs. The epitaxial structure was grown by MBE in a single growth run using in-situ optical reflectance feedback control to accurately control layer thicknesses. The top and bottom distributed Bragg reflector mirrors contained 28 and 33 periods, respectively. With the exception of a single period of the upper mirror nearest the cavity, both mirrors were doped n-type to reduce free carrier absorption losses. A reverse-biased GaAs tunnel diode provided a high-conductivity transition between n- and p-type regions of the upper mirror. Electrical and optical confinement were provided by selectively oxidized AlAs layers adjacent to the cavity. CW room-temperature lasing was obtained in these devices at wavelengths as long as 1294 nm, while pulsed lasing was obtained at wavelengths as long as 1305 nm. A side mode suppression of 28 dB is observed in devices operating CW at slightly shorter wavelengths. A maximum single mode output power of 140 /spl mu/W at 1289 nm was obtained at 20/spl deg/C and continuous wave operation was observed up to 50/spl deg/C. VCSELs operated with threshold currents varying from 1.5 to 7 mA. Equivalent threshold current densities were as low as 4 kA/cm/sub 2/. Open eye diagrams were obtained for devices driven on-wafer with pseudo-random bit sequences at 2.5 Gb/s. With modifications to the mirror design to lower the device voltage and modest improvements to the InGaAsN quality, we expect significantly improved optical and electrical performance.
Starting Page	127
Ending Page	128
File Size	154757
Page Count	2
File Format	PDF
ISBN	078035947X
ISSN	10928081
DOI	10.1109/LEOS.2000.890707
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mirrors Optical feedback Optical pumping Vertical cavity surface emitting lasers Gallium arsenide Optical control Threshold current Optical surface waves Molecular beam epitaxial growth Stimulated emission
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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