NDLI: Prediction of excess noise factor and frequency response for thin avalanche photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Hayat, M.M. Saleh, M.A. Ohhyun Kwon Saleh, B.E.A. Teich, M.C.
Copyright Year	2000
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Dayton Univ., OH, USA (Hayat, M.M.)
Abstract	Summary form only given. Recent experimental measurements from InP and InAlAs avalanche photodiodes (APDs) with thin multiplication regions, collected by J.C. Campbell and collaborators at the University of Texas at Austin, show that, for a fixed gain the excess noise factor is significantly lower than that predicted by the conventional McIntyre theory. The observed dependence of the noise on the multiplication-region width cannot be explained using the conventional theory in which the excess noise factor is a function only of the mean gain and the ionization coefficient ratio. In the dead-space-multiplication theory (DSMT), a carrier must travel a certain distance, called the dead space, before gaining sufficient energy for impact ionisation to occur. Because this dead space regularizes the ionisation locations, the randomness of the avalanching mechanism is reduced. For thin multiplication-region APDs, this effect is proportionally higher and thus the noise is lower. We applied the DSMT to the experimental results for GaAs and AlGaAs and more recently for InP and InAlAs APDs. We were able to fit the ionization coefficients associated with devices of various thicknesses, as a function of the electric field, within the confines of a single exponential model.
Starting Page	11
Ending Page	12
File Size	136368
Page Count	2
File Format	PDF
ISBN	078035947X
ISSN	10928081
DOI	10.1109/LEOS.2000.890648
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2000-11-13
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Frequency response Avalanche photodiodes Ionization Indium phosphide Gallium arsenide Bandwidth Electronic mail Indium compounds Signal to noise ratio Space exploration
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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