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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yakovlev, Yu.P. Monakhov, A.M. Moiseev, K.D. Mikhailova, M.P. Sherst, V.V. |
| Copyright Year | 2000 |
| Description | Author affiliation: A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia (Yakovlev, Yu.P.) |
| Abstract | Summary form only given. We propose a new physical approach to design mid-IR lasers based on Ill-V compounds operating in the spectral range 3-4 /spl mu/m. The using of the wide-gap confined layers with large band offsets at the narrow-gap active layer heteroboundaries allows to create the high barriers for carriers and to reduce leakage current from an active region, that leads to increase the quantum efficiency of the emission due to the strong accumulation of the recombining carriers. Theoretical models of a new asymmetric laser combining the advantages of type I and type II heterostructures are discussed. This approach was successfully used for fabrication of the high power lasers operating at /spl lambda/=3.26 /spl mu/m. The laser structure containing the narrow-gap active InGaAsSb layer sandwiched by the wide-gap InAsSbP and GaInAsSb layers lattice-matched to InAs substrate was grown by liquid phase epitaxy. |
| File Size | 84354 |
| File Format | |
| ISBN | 0780363191 |
| DOI | 10.1109/CLEOE.2000.910291 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-09-10 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Power lasers Laser theory Laser modes Optical design Carrier confinement Leakage current Radiative recombination Optical device fabrication Substrates Epitaxial growth |
| Content Type | Text |
| Resource Type | Article |
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