NDLI: Impact of STI stress on the junction characteristics

Content Provider	IEEE Xplore Digital Library
Author	Shiozawa, K. Horita, K. Kuroi, T. Abe, Y. Eimori, T.
Copyright Year	2001
Description	Author affiliation: Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Itami, Japan (Shiozawa, K.)
Abstract	Degradation of junction characteristics induced by STI stress has investigated in detail. STI stress is enhanced by the scaling of isolation pitch, the volume expansion induced by oxidation step, and the film stress of filling materials. The stress control becomes more important to keep the lower junction leakage current.
Sponsorship	Japan Soc. Appl. Phys.-Silicon Technol. Div.
Starting Page	19
Ending Page	20
File Size	243132
Page Count	2
File Format	PDF
ISBN	4891140194
DOI	10.1109/IWJT.2001.993818
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-11-29
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Applied Physics
Subject Keyword	Oxidation Leakage current Ultra large scale integration Diodes Degradation Character generation Temperature distribution Thermal stresses Isolation technology Research and development
Content Type	Text
Resource Type	Article

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