NDLI: Challenges for ion implantation

Content Provider	IEEE Xplore Digital Library
Author	Poate, J.M. Agarwal, A. Rubin, L.M. Natsuaki, N. Sugitani, M.
Copyright Year	2001
Description	Author affiliation: Axcelis Technol. Inc., Beverly, MA, USA (Poate, J.M.)
Abstract	We review the many challenges that lie ahead for ion implantation. Continued device scaling requires the formation of ever-shallower, low-resistivity junctions. Recent trends in conventional implant and RTA processing, such as the use of ultra-low energy implants and spike anneals, allow these technologies to continue to be used for the formation of ultra-shallow junctions that meet the ITRS requirements for at least the 70 nm node. Successful fabrication of sub-100 nm devices will also require an understanding of the use of species such as indium and antimony for ultra-precise dopant placement. There will be an expanded use of high energy implantation. Applications here include triple well isolation for memory structures, and buried layer implants for W gettering. We discuss non-traditional applications of ion implantation. These include implants for the fabrication of SOI materials and implants into vertical device structures. We conclude with a discussion of the implications of these technologies on the future of the ion implantation business.
Sponsorship	Japan Soc. Appl. Phys.-Silicon Technol. Div.
Starting Page	1
Ending Page	5
File Size	549144
Page Count	5
File Format	PDF
ISBN	4891140194
DOI	10.1109/IWJT.2001.993813
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-11-29
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Japan Soc. Of Applied Physics
Subject Keyword	Ion implantation Implants Annealing MOSFETs Boron Fabrication Silicon on insulator technology Manufacturing Degradation Indium
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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