NDLI: Low-resistance multi-walled carbon nanotube vias with parallel channel conduction of inner shells [IC interconnect applications]

Content Provider	IEEE Xplore Digital Library
Author	Nihei, M. Kondo, D. Kawabata, A. Sato, S. Shioya, H. Sakaue, M. Iwai, T. Ohfuti, M. Awano, Y.
Copyright Year	2005
Description	Author affiliation: Fujitsu Labs. Ltd., Atsugi, Japan (Nihei, M.; Kondo, D.; Kawabata, A.; Sato, S.; Shioya, H.; Sakaue, M.)
Abstract	We have succeeded in lowering the resistance of multi-walled carbon nanotube (MWNT) vias, using parallel channel conduction of each tube's inner shells. By optimizing the structure of the interface between MWNTs and Ti bottom contact layers, we could obtain a via resistance of 0.7 /spl Omega/ for a 2-/spl mu/m-diameter via consisting of about 1000 MWNTs. The corresponding resistance of about 0.7 k/spl Omega/ per MWNT indicates that most of the inner shells contribute to carrier conduction as an additional channel. The total resistance of the CNT vias that we fabricated is in the same order of magnitude as the theoretical value of W plugs and one order of magnitude higher than the theoretical value of Cu vias.
Sponsorship	IEEE Electron Devices Soc
Starting Page	234
Ending Page	236
File Size	616246
Page Count	3
File Format	PDF
ISBN	078038752X
DOI	10.1109/IITC.2005.1499995
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-06-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Carbon nanotubes Electric resistance Wire Temperature Contact resistance Wiring Large scale integration Dielectric substrates Nanotechnology Laboratories
Content Type	Text
Resource Type	Article

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